BFS17S aug-20-2001 1 npn silicon rf transistor for broadband amplifiers up to 1 ghz at collector currents from 1 ma to 20 ma vps05604 6 3 1 5 4 2 eha07196 6 54 3 2 1 c1 e2 b2 c2 e1 b1 tr1 tr2 type marking pin configuration package BFS17S mcs 1=b1 2=e1 3=c2 4=b2 5=e2 6=c1 sot363 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 15 v collector-base voltage v cbo 25 emitter-base voltage v ebo 2.5 collector current i c 25 ma peak collector current , f = 10 mhz i cm 50 total power dissipation t s 93 c 1) p tot 280 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t stg -65 ... 150 thermal resistance junction - soldering point 2) r thjs 240 k/w 1 t s is measured on the collector lead at the soldering point to the pcb 2 for calculation of r thja please refer to application note thermal resistance
BFS17S aug-20-2001 2 electrical characteristics a t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 15 - - v collector-base cutoff current v cb = 10 v, i e = 0 v cb = 25 v, i e = 0 i cbo - - - - 0.05 10 a emitter-base cutoff current v eb = 2.5 v, i c = 0 i ebo - - 100 dc current gain i c = 2 ma, v ce = 1 v i c = 25 ma, v ce = 1 v h fe 20 20 - 70 150 - - collector-emitter saturation voltage i c = 10 ma, i b = 1 ma v cesat - 0.1 0.4 v
BFS17S aug-20-2001 3 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. ac characteristics transition frequency i c = 2 ma, v ce = 5 v, f = 200 mhz i c = 25 ma, v ce = 5 v, f = 200 mhz f t 1 1.3 1.4 2.5 - - ghz collector-base capacitance v cb = 5 v, f = 1 mhz c cb - 0.55 0.8 pf collector-emitter capacitance v ce = 5 v, f = 1 mhz c ce - 0.13 - input capacitance v eb = 0.5 v, i c = 0 , f = 1 mhz c ibo - 1.45 - output capacitance v ce = 5 v, v be = 0 , f = 1 mhz c obs - - 1.5 noise figure i c = 2 ma, v ce = 5 v, f = 800 mhz, z s = 0 f - 3.5 5 db transducer gain i c = 20 ma, v ce = 5 v, z s = z l = 50 , f = 500 mhz | s 21e | 2 - 12,7 - linear output voltage i c = 14 ma, v ce = 5 v, d im = 60 db, f 1 = 806 mhz, f 2 = 810 mhz, z s = z l = 50 v 01 = v 02 - 100 - mv third order intercept point i c = 200 ma, v ce = 8 v, z s = z sopt , z l = z lopt , f = 900 mhz ip 3 - 23 - dbm
BFS17S aug-20-2001 4 total power dissipation p tot = f ( t s ) 0 20 40 60 80 100 120 c 150 t s 0 20 40 60 80 100 120 140 160 180 200 220 240 mw 300 p tot permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
BFS17S aug-20-2001 5 collector-base capacitance c cb = f ( v cb ) f = 1mhz 0 4 8 12 16 20 v 26 v cb 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 pf 1.3 c cb transition frequency f t = f ( i c ) v ce = parameter 0 5 10 15 20 ma 30 i c 0.0 0.5 1.0 1.5 2.0 ghz 3.0 f t 10v 5v 3v 2v 1v 0.7v
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